DocumentCode :
1770873
Title :
Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs
Author :
Matsuda, Akihiro ; Hiroki, Akira ; Goto, Yuta ; Nakamura, Masaaki ; JongChul Yoon
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
fYear :
2014
fDate :
19-20 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
This paper describes gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that InGaAs n-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VG dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VG dependence of λ is essential in simulation of the current voltage characteristics for InGaAs n-channel MOSFETs.
Keywords :
MOSFET; gallium arsenide; indium compounds; modulation; semiconductor device models; InGaAs; channel length modulation; current voltage characteristics; gate voltage dependence; n-channel MOSFET; Analytical models; Current-voltage characteristics; Indium gallium arsenide; Logic gates; MOSFET; Modulation; Semiconductor device modeling; InGaAs n-channel MOSFETs; analytical current model; channel length modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
Type :
conf
DOI :
10.1109/IMFEDK.2014.6867056
Filename :
6867056
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1770873
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