Title :
Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx
Author :
Kakegami, T. ; Ohi, S. ; Sengendo, K.P. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNx dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.
Keywords :
III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; high electron mobility transistors; passivation; sputter deposition; wide band gap semiconductors; AlGaN-GaN; HEMT passivation; SiNx; SiO2; current collapse; high-electron-mobility transistors; pulsed I-V measurements; sputter-deposited dielectrics; switching response; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Switches; AlGaN/GaN; HEMTs; SiNx; SiO2; current collapse;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867061
