• DocumentCode
    1770885
  • Title

    Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

  • Author

    Kodama, Shintaro ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

  • Author_Institution
    Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
  • fYear
    2014
  • fDate
    19-20 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Interface properties have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al2O3, and the energy level of the interface state became shallow with increasing the annealing temperature.
  • Keywords
    III-V semiconductors; MIS devices; alumina; gallium compounds; interface states; semiconductor diodes; wide band gap semiconductors; zirconium compounds; GaN; MIS diodes; ZrO2-Al2O3; annealing temperature; deposition sequence; energy level; gate insulator; interface properties; interface state density; laminated films; Aluminum oxide; Annealing; Dielectric constant; Films; Insulators; Interface states; Logic gates; Al2O3; GaN; MIS diode; ZrO2;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-3614-4
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2014.6867063
  • Filename
    6867063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770885