Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature

Author

Sun, Y. ; Maemoto, T. ; Sasa, S.

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×10⁶.

Keywords

aluminium; glass; pulsed laser deposition; thin film transistors; zinc compounds; PLD; TFT; ZnO:Al; fully transparent thin-film transistors; glass substrates; low resistivity transparent conducting films; pulsed laser deposition; temperature 293 K to 298 K; transparent electrode; Conductivity; Electrodes; Logic gates; Optical variables measurement; Pulsed laser deposition; Thin film transistors; Zinc oxide; Zinc oxide; room-temperature process; thin-film transistor; transparent;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867064

Filename

6867064