Title :
Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature
Author :
Sun, Y. ; Maemoto, T. ; Sasa, S.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.
Keywords :
aluminium; glass; pulsed laser deposition; thin film transistors; zinc compounds; PLD; TFT; ZnO:Al; fully transparent thin-film transistors; glass substrates; low resistivity transparent conducting films; pulsed laser deposition; temperature 293 K to 298 K; transparent electrode; Conductivity; Electrodes; Logic gates; Optical variables measurement; Pulsed laser deposition; Thin film transistors; Zinc oxide; Zinc oxide; room-temperature process; thin-film transistor; transparent;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867064
