Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

Author

Ohi, S. ; Kakegami, T. ; Tokuda, H. ; Kuzuhara, M.

Author_Institution

Grad. Schoo of Eng. Univ. of Fukui, Fukui, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO₂, SiN or their multilayered dielectric films. The device with SiO₂ passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO₂-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO₂ multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.

Keywords

III-V semiconductors; aluminium compounds; dielectric materials; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; passivation; silicon compounds; sputter deposition; wide band gap semiconductors; AlGaN-GaN; HEMT; SiN-SiO₂; breakdown voltage; dc characteristics; high-electron-mobility transistors; leakage current; multilayer-passivated device; multilayered dielectric films; on-resistance; passivation films; sputter-deposition; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; Logic gates; Passivation; Silicon compounds; AlGaN/GaN; SiN; SiO2; passivation layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867065

Filename

6867065