Title :
Effect of passivation films on DC characteristics of AlGaN/GaN HEMT
Author :
Ohi, S. ; Kakegami, T. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Schoo of Eng. Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.
Keywords :
III-V semiconductors; aluminium compounds; dielectric materials; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; passivation; silicon compounds; sputter deposition; wide band gap semiconductors; AlGaN-GaN; HEMT; SiN-SiO2; breakdown voltage; dc characteristics; high-electron-mobility transistors; leakage current; multilayer-passivated device; multilayered dielectric films; on-resistance; passivation films; sputter-deposition; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; Logic gates; Passivation; Silicon compounds; AlGaN/GaN; SiN; SiO2; passivation layer;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867065
