Title :
Postgrowth annealing effects on structural, optical, and electrical properties of β-MoO3 films grown by molecular beam epitaxy
Author :
Yagi, Shinji ; Matsuo, Masayuki ; Koike, Kazuto ; Harada, Yoshiyuki ; Sasa, Shigehiko ; Yano, Mitsuaki
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO3 film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO3-x domains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.
Keywords :
annealing; electrical resistivity; epitaxial layers; molecular beam epitaxial growth; molybdenum compounds; solid-state phase transformations; thermodynamic properties; visible spectra; β-phase transformation; Al2O3; MoO3; annealing effect; c-plane sapphire substrate; electrical properties; electrical resistivity; light absorbance; low-temperature grown β-phase MoO3 films; molecular beam epitaxy; nitrogen atmosphere; optical properties; oxygen atmosphere; oxygen deficient MoO3-x domains; structural properties; thermo-dynamically stable α-phase transformation; visible region; Annealing; Atmosphere; Atmospheric measurements; Nitrogen; Optical diffraction; Optical films; MoO3; phase transition; postgrowth annealing effect;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867068
