Title :
Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing
Author :
Hayashi, T. ; Liang, J. ; Nishida, S. ; Shigekawa, N. ; Arai, M.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
Keywords :
annealing; electrical conductivity; semiconductor junctions; silicon; silicon compounds; wide band gap semiconductors; Si-SiC; annealing; elecrical properties; junctions; surface activated bonding; Annealing; Bonding; Heterojunctions; Silicon; Silicon carbide; Substrates; Si; SiC; annealing; interface; surface activated bonding;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867070
