• DocumentCode
    1770897
  • Title

    Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing

  • Author

    Hayashi, T. ; Liang, J. ; Nishida, S. ; Shigekawa, N. ; Arai, M.

  • Author_Institution
    Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
  • fYear
    2014
  • fDate
    19-20 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
  • Keywords
    annealing; electrical conductivity; semiconductor junctions; silicon; silicon compounds; wide band gap semiconductors; Si-SiC; annealing; elecrical properties; junctions; surface activated bonding; Annealing; Bonding; Heterojunctions; Silicon; Silicon carbide; Substrates; Si; SiC; annealing; interface; surface activated bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-3614-4
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2014.6867070
  • Filename
    6867070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770897