DocumentCode
1770920
Title
Design of CMOS resonating push-push frequency doubler
Author
Adachi, Hiroshi ; Motoyoshi, Mizuki ; Takano, Kyoya ; Katayama, Kosuke ; Amakawa, Shuhei ; Yoshida, Takeshi ; Fujishima, Minoru
Author_Institution
Fac. of Eng., Hiroshima Univ., Higashi-Hiroshima, Japan
fYear
2014
fDate
19-20 June 2014
Firstpage
1
Lastpage
2
Abstract
This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
Keywords
CMOS integrated circuits; MOSFET circuits; frequency multipliers; CMOS resonating push-push frequency doubler; conversion gain; differentially driven MOSFET; CMOS integrated circuits; Frequency conversion; Gain; MOSFET; Power generation; Power transmission lines; Resonant frequency; CMOS; frequency multiplier; millimeter-wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-3614-4
Type
conf
DOI
10.1109/IMFEDK.2014.6867082
Filename
6867082
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