Title :
Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress
Author :
Kise, Kahori ; Fujii, Mami ; Tomai, Shigekazu ; Ueoka, Yoshihiro ; Yamazaki, Haruka ; Urakawa, Satoshi ; Yano, Koki ; Wang, Dapeng ; Furuta, Mamoru ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.
Keywords :
amorphous semiconductors; heating; thin film transistors; Joule heating; channel region; heating phenomenon analysis; infrared imaging system; next-generation display; oxide thin-film transistor; pulse operation; pulse voltage stress; self-heating temperature; thermal distribution; transparent amorphous oxide semiconductor TFT; Degradation; Heating; Plasma temperature; Stress; Thermal analysis; Thin film transistors; Voltage measurement; TAOS; pulse stress; thermal analysis; thermal distribution;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867089
