Title :
In-situ TEM observation of ReRAM switching
Author :
Takahashi, Yasuo ; Arita, Masashi
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
Keywords :
resistive RAM; transmission electron microscopy; ReRAM material; ReRAM switching; in-situ TEM observation; resistive random access memory switching; transmission electron microscopy; Electrodes; Random access memory; Resistance; Switches; Tin; Transmission electron microscopy; ReRAM; Resistive random access memory; Transmission electron microscopy; in-situ TEM;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867091
