Title :
Thermally stable n+-InGaZnO layer stacked by fluorinated silicon nitride for self-aligned thin-film transistor application
Author :
Dapeng Wang ; Jingxin Jiang ; Furuta, Mamoru
Author_Institution :
Dept. of Environ. Sci. & Eng., Kochi Univ. of Technol., Kochi, Japan
Abstract :
Thermal stability of amorphous InGaZnO (a-IGZO) film stacked by fluorinated silicon nitride (SiNx:F) was investigated. The electrical properties of stacked a-IGZO, including the resistivity of ~4.0 × 10-3 Ω-cm, the carrier concentration of ~1020 cm-3, and Hall mobility of ~19.0 cm2/Vs, showed highly thermally stable irrespective of annealing temperature. On the basis of this phenomenon, a novel bottom-gate and self-aligned IGZO TFT combined the back-side exposure technique with directly stacked IGZO/SiNx:F layers in the S/D regions was fabricated. The proposed a-IGZO TFT exhibits good electrical characteristics and highly thermal stability even annealing as high as 350 °C.
Keywords :
Hall mobility; annealing; electric properties; fluorine; gallium compounds; indium compounds; silicon compounds; thermal stability; thin film transistors; zinc compounds; Hall mobility; InGaZnO; SiNx:F; amorphous film; annealing temperature; back-side exposure technique; bottom-gate; carrier concentration; directly stacked layers; electrical properties; self-aligned TFT; self-aligned thin-film transistor application; thermally stable n+-layer; Annealing; Conductivity; Films; Hall effect; Logic gates; Thermal stability; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867114
