Title :
Hydrogen behavior from ALD Al2O3 passivation layer for amorphous InGaZnO TFTs
Author :
Tanaka, J. ; Ueoka, Yoshihiro ; Yoshitsugu, Koji ; Fujii, Masahiro ; Ishikawa, Yozo ; Uraoka, Y. ; Takechi, Kazushige ; Tanabe, Hiroshi
Author_Institution :
NLT Technol., Ltd., Kawasaki, Japan
Abstract :
The characteristics of amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) fabricated using atomic layer deposition (ALD) Al2O3 passivation layer and hydrogen distribution in a-InGaZnO were investigated by comparison with plasma enhanced chemical vapor deposition (PECVD) passivation layer. TFTs fabricated using PECVD passivation layer showed conductive or hump behavior, while that fabricated using ALD passivation layer showed enhancement type characteristics. According to secondary ion mass spectroscopy analysis, hydrogen was introduced into a-InGaZnO during PECVD, while it was hardly introduced during ALD regardless of considerable hydrogen in Al2O3. Thus, the behavior of hydrogen in a-InGaZnO is one possible cause of the difference in TFT characteristics between PECVD and ALD passivation.
Keywords :
alumina; amorphous semiconductors; atomic layer deposition; gallium compounds; hydrogen; indium compounds; passivation; secondary ion mass spectra; semiconductor thin films; thin film transistors; zinc compounds; ALD passivation layer; Al2O3; H; InGaZnO; PECVD passivation layer; amorphous TFTs; amorphous indium gallium zinc oxide thin-film transistors; atomic layer deposition; conductive behavior; enhancement type characteristics; hump behavior; hydrogen behavior; hydrogen distribution; plasma enhanced chemical vapor deposition; secondary ion mass spectroscopy analysis; Aluminum oxide; Annealing; Hydrogen; Indium gallium zinc oxide; Passivation; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867115
