Title :
Back channel etch oxide TFT on plastic substrate for the application of high resolution TFT-LCD
Author :
Sang-Hee Ko Park ; In Yong Eom ; Jungho Jin ; Hwea Yoon Kim ; Hyein-Gyun Im ; Byeong-Soo Bae ; Sung Haeng Cho ; Jong Woo Kim ; Minki Ryu ; Chi-Sun Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
We present high performance back channel etch (BCE) oxide TFT of which overlap capacitance between source/drain and gate is minimized. With considering application to the plastic LCD, we fabricated BCE TFT under 250oC with PECVD SiNx/PEALD SiO2 gate insulator and its mobility, S.S, Vth are 28.7 cm2/V.s, 0.1 V/dec, and 1.06 V, respectively. Its Vth shift under positive bias stress for 10,000 seconds is 0.75 V at 20V. BCE TFT fabricated on transparent GFRHybrimer film which has no retardation showed mobility of 19.1 cm2/V.s.
Keywords :
capacitance; liquid crystal displays; silicon compounds; thin film transistors; PECVD; SiNx-SiO2; back channel etch oxide TFT; capacitance; gate insulator; high resolution TFT-LCD; mobility; plastic LCD; plastic substrate; positive bias stress; transparent GFRHybrimer film; voltage 20 V; Annealing; Films; Insulators; Logic gates; Passivation; Plastics; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867117
