Title :
Rheology printing of oxide transistors
Author :
Shimoda, Tatsuya
Author_Institution :
Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol., Nomi, Japan
Abstract :
A new precise printing method for device fabrication was developed. It is called `nano-Rheology Printing´, because it is using rheological nature of oxide-gels and can be adapted to nano-sized patterning. Two types of oxide TFTs having a channel length of 0.5 μm were successfully fabricated and their good properties were demonstrated. Now this technology is being applied for an AM-FPD application.
Keywords :
gels; printing; thin film transistors; AM-FPD application; channel length; device fabrication; nano-rheology printing method; nano-sized patterning; oxide TFTs; oxide transistors; oxide-gels; size 0.5 mum; Films; Indium tin oxide; Logic gates; Printing; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867119
