Facile oxygen-plasma approach for depositing Silicon/nitride oxide on transparent, flexible zinc-oxide thin film transistors

Author

Cheng-Jyun Wang ; Hsin-Chiang You ; Yu-Hsien Lin

Author_Institution

Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan

fYear

2014

fDate

2-4 July 2014

Firstpage

109

Lastpage

112

Abstract

This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) substrate. The effect of an oxygen (O₂) plasma power of 18 W followed by low temperature (~approximately 150 °C) annealing on a hot plate was evaluated, attempting to enhance on/off current ratio and sustainability of ZnO-TFTs. ZnO based TFTs fabricated on silicon oxide and nitride oxide exhibited on/off ratio of~approximately 10³ and 10⁸, respectively without O₂ plasma; these ratios can be improved to ~approximately 10⁶ by using oxygen plasma treatment. The PI substrate exhibited an on/off ratio of ~approximately 10⁸.

Keywords

II-VI semiconductors; annealing; flexible electronics; low-temperature techniques; nitrogen compounds; plasma deposition; polymers; semiconductor thin films; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; NO₂; PI substrate; Si; SiO₂; TFT; ZnO; facile oxygen-plasma treatment approach; flexible polyimide substrate; hot plate; low temperature annealing; on-off current ratio; power 18 W; semiconducting channel layer; silicon-nitride oxide deposition; transparent flexible zinc-oxide thin film transistors; Plasmas; Silicon; Substrates; Surface treatment; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867140

Filename

6867140