Title :
Impacts of an Al2O3 capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure
Author :
Kyeong-Ah Kim ; Jun-Yong Bak ; Sung-Min Yoon
Author_Institution :
Dept. of Adv. Mater. Eng. for Inf. & Electron., Kyung Hee Univ., Yongin, South Korea
Abstract :
Top-gate oxide thin-film transistors (TFTs) with the gate-stack structure composed of solution-processed poly-4-vinylphenol (PVP) organic gate insulator (GI) and Al-Zn-Sn-O (AZTO) active channel were fabricated and characterized. It was confirmed that the electrical properties of PVP films were seriously degraded by developer and/or resist stripper during the photolithography performed for the patterning process. An atomic-layer-deposited Al2O3 thin film was introduced as a capping layer for protecting the PVP GI to realize a high-performance solution-based top-gate oxide TFTs. The fabricated TFTs with Al2O3/PVP/AZTO gate-stacks exhibited sufficiently encouraging characteristics.
Keywords :
aluminium compounds; organic insulating materials; photolithography; polymer films; thin film transistors; zinc compounds; AZTO; Al2O3-AlZnSnO; GI; PVP film; TFT; atomic-layer-deposited thin film; cappin layer; fully-patterned top-gate oxide thin-film transistor; patterning process; photolithography; solution-processed gate-stack structure; solution-processed poly-4-vinylphenol organic gate insulator; Aluminum oxide; Chemicals; Films; Lithography; Logic gates; Resists; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867143
