Impacts of an Al2O3 capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

Author

Kyeong-Ah Kim ; Jun-Yong Bak ; Sung-Min Yoon

Author_Institution

Dept. of Adv. Mater. Eng. for Inf. & Electron., Kyung Hee Univ., Yongin, South Korea

fYear

2014

fDate

2-4 July 2014

Firstpage

121

Lastpage

123

Abstract

Top-gate oxide thin-film transistors (TFTs) with the gate-stack structure composed of solution-processed poly-4-vinylphenol (PVP) organic gate insulator (GI) and Al-Zn-Sn-O (AZTO) active channel were fabricated and characterized. It was confirmed that the electrical properties of PVP films were seriously degraded by developer and/or resist stripper during the photolithography performed for the patterning process. An atomic-layer-deposited Al₂O₃ thin film was introduced as a capping layer for protecting the PVP GI to realize a high-performance solution-based top-gate oxide TFTs. The fabricated TFTs with Al₂O₃/PVP/AZTO gate-stacks exhibited sufficiently encouraging characteristics.

Keywords

aluminium compounds; organic insulating materials; photolithography; polymer films; thin film transistors; zinc compounds; AZTO; Al₂O₃-AlZnSnO; GI; PVP film; TFT; atomic-layer-deposited thin film; cappin layer; fully-patterned top-gate oxide thin-film transistor; patterning process; photolithography; solution-processed gate-stack structure; solution-processed poly-4-vinylphenol organic gate insulator; Aluminum oxide; Chemicals; Films; Lithography; Logic gates; Resists; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867143

Filename

6867143