DocumentCode
1771025
Title
Self-aligned amorphous indium-gallium-zinc-oxide thin-film transistor using a two-mask process without etching-stop layer
Author
Ching-Lin Fan ; Ming-Chi Shang ; Bo-Jyun Li ; Shea-Jue Wang ; Win-Der Lee
Author_Institution
Grad. Inst. of Electro-Opt. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear
2014
fDate
2-4 July 2014
Firstpage
129
Lastpage
132
Abstract
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure, which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.
Keywords
etching; gallium compounds; indium compounds; masks; thin film transistors; zinc compounds; BCE structure; InGaZnO; back-channel-etch structure; gate-to-source-drain capacitance; low cost TFT circuits; photomasks; self-aligned amorphous thin-film transistors; two-mask process; Capacitance; Charge carrier processes; Electrodes; Inverters; Logic gates; Stress; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/AM-FPD.2014.6867147
Filename
6867147
Link To Document