High speed circuit with bulk accumulation mode a-IGZO TFTs

Author

Xiuling Li ; Di Geng ; Jin Jang

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

fYear

2014

fDate

2-4 July 2014

Firstpage

137

Lastpage

139

Abstract

We demonstrate that the use of dual-gate (DG) back-channel-etched amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with channel length of 6 μm and a top-gate offset structure enhances the switching speed of a-IGZO TFT-based circuits. Taking advantage of bulk-accumulation, DG a-IGZO TFTs with top- and bottom-gates physically tied together (DG-driving) achieve high ON-current of ~1 mA at V_GS of 10 V, small sub-threshold voltage swing of 156 mV/dec and near zero-volt turn on voltage (V_ON). The fabricated DG-driven 7-stage ring oscillator (RO) exhibits an oscillating frequency of 3.7 MHz at a supply voltage of 20 V.

Keywords

gallium compounds; indium compounds; oscillators; thin film transistors; DG a-IGZO TFTs; DG back-channel-etched amorphous-indium-gallium-zinc-oxide TFT; DG-driving; bulk accumulation mode a-IGZO TFT; current 1 mA; dual-gate back-channel-etched a-IGZO TFT; fabricated DG-driven 7-stage RO; fabricated DG-driven 7-stage ring oscillator; frequency 3.7 MHz; high-speed circuit; oscillating frequency; subthreshold voltage; switching speed; thin-film transistors; top-gate offset structure; voltage 10 V; voltage 20 V; Electrodes; Inverters; Logic gates; Ring oscillators; Switching circuits; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867149

Filename

6867149