Reliability improvement in amorphous InGaZnO thin film transistors passivated by photosensitive polysilsesquioxane passivation layer

Author

Bermundo, Juan Paolo ; Ishikawa, Yozo ; Yamazaki, Hiroshi ; Nonaka, Tomomi ; Uraoka, Y.

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan

fYear

2014

fDate

2-4 July 2014

Firstpage

145

Lastpage

147

Abstract

We report the fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a novel photosensitive polysilsesquioxane-based passivation layer using a simple solution process. Results show that the photosensitive passivation material is effective in improving the reliability of a-IGZO. a-IGZO thin film transistors (TFT) passivated by this photosensitive material exhibited a small threshold voltage (V_th) shift of ~ 0.4 V during positive bias stress (PBS), ~ -0.15 V during negative bias stress (NBS) and -2.3 V during negative bias illumination stress (NBIS). These results demonstrate the large potential of easy to fabricate photosensitive polysilsesquioxane passivation layers as effective passivation material.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; passivation; polymers; semiconductor device reliability; thin film transistors; zinc compounds; InGaZnO; amorphous InGaZnO thin film transistors; negative bias illumination stress; photosensitive polysilsesquioxane-based passivation layer; positive bias stress; reliability; threshold voltage shift; Degradation; Logic gates; Materials; NIST; Passivation; Stress; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867152

Filename

6867152