Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3

Author

Nguyen, Thi Thu Thuy ; Aventurier, Bernard ; Renault, Olivier ; Terlier, Tanguy ; Barnes, Jean-Paul ; Templier, Francois

Author_Institution

Opt. & Photonics Dept., CEA-Leti, Grenoble, France

fYear

2014

fDate

2-4 July 2014

Firstpage

149

Lastpage

152

Abstract

The degradation of electrical parameters of non-passivated IGZO TFTs is showed, which exhibited the indispensability of a passivation layer. After that, the electrical characteristics obtained by passivating TFTs by SiO₂ (PECVD) or Al₂O₃ (ALD), is reported. Some results of SIMS and XPS analysis are presented to discuss the origins of passivated TFTs comportment, concretely, the diffusion of hydrogen into IGZO channel. We proposed finally some methods to eliminate this degradation.

Keywords

X-ray photoelectron spectra; alumina; diffusion; gallium compounds; hydrogen; indium compounds; passivation; secondary ion mass spectra; semiconductor materials; silicon compounds; thin film transistors; zinc compounds; Al₂O₃; IGZO TFT; InGaZnO:H; SIMS; SiO₂; XPS; electrical characteristics; electrical parameters; hydrogen diffusion; Aluminum oxide; Degradation; Hydrogen; Passivation; Plasmas; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867154

Filename

6867154