DocumentCode
1771044
Title
A novel poly-Si thin film transistor with ONO offset structure
Author
Kun-Ye Liou ; Feng-Tso Chien
Author_Institution
Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan
fYear
2014
fDate
2-4 July 2014
Firstpage
161
Lastpage
163
Abstract
In this study, a new TFT structure which includes the raised source/drain (RSD) and ONO offset structure above source and drain area, has been proposed. The RSD and ONO offset structure can effectively reduce the electric field near the channel/drain region. The lower electric field of the proposed TFT will be useful to reduce the leakage current and alleviate the kink effect. Therefore, the new TFT is suitable to be used in active-matrix flat panel electronics.
Keywords
electric fields; elemental semiconductors; leakage currents; silicon; thin film transistors; ONO offset structure; RSD; Si; TFT structure; active-matrix flat panel electronics; channel-drain region; electric field reduction; kink effect; leakage current reduction; polysilicon thin film transistor; raised source-drain structure; Impact ionization; Ion implantation; Leakage currents; Logic gates; Performance evaluation; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/AM-FPD.2014.6867158
Filename
6867158
Link To Document