Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics

Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.