Charge retention and conduction mechanism of DNA memory transistor

The carrier behavior m DNA was examined using the DNA channel/SiO₂/Si gate structure. In this case, electrodes with a gap of 120 nm using a substrate Si was prepared and DNA was fixed between the electrodes. The dI_D/dV_D shows the maximum value at the drain voltage of 0.7 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel. In the case of p-Si, the holes of majority earriers are emitted from the drain electrodes by recombination of electrons and holes in the DNA channel.