• DocumentCode
    1771051
  • Title

    Effect of quantum confinement in Si-QD on free-carrier modulation bandwidth and cross-section of the SiOx:Si-QD waveguide

  • Author

    Chung-Lun Wu ; Sheng-Pin Su ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The free-carrier cross-section of Si-QD is decreased from 5.5×10-17 to 9×10-18 cm2 with shortened lifetime from 10 to 0.48 μs when shrinking Si-QD size from 4.3 to 1.7 nm due to the quantum confinement effect.
  • Keywords
    elemental semiconductors; optical waveguides; semiconductor quantum dots; silicon; Si; Si-QD; free-carrier cross-section; free-carrier modulation bandwidth; lifetime; quantum confinement; quantum dot; size 4.3 nm to 1.7 nm; time 10 mus to 0.48 mus; waveguide; Fitting; Laser excitation; Measurement by laser beam; Modulation; Optical waveguides; Probes; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771051