Solution-processed top-gate-type n-channel organic field-effect transistors with silver-nanowire source/drain electrodes fabricated on polymer substrate

The properties of solution-processed top-gate-type n-channel organic field-effect transistors (OFETs) utilizing perylene dimide derivative films with silver (Ag) source/drain (S/D) electrodes are investigated. With an increase in the annealing temperature, the electron transport characteristics are improved. The increase in grain size leads to an increase in electron field-effect mobility. An OFET with Ag-nanowire (AgNW) S/D electrode fabricated on a polymer substrate exhibits n-channel characteristics with electron field-effect mobility of 0.04 cm² V^-1 s^-1 in air. We demonstrate the possibility of producing flexible and air-stable n-channel OFETs using AgNW electrodes.