Investigation of a-Si:H films passivation quality by ECRCVD and application of silicon heterojunction solar cells

We investigated the quality of intrinsic layer by modulating the hydrogen dilution ratio (H₂/SiH₄) at various growth temperatures. The results of lifetime measurements indicate that a-Si:H intrinsic layer can successfully obtained the effective life time (~446us) and the implied open circuit voltage (~0.69 mV) under hydrogen dilution ratio (R_H = 2) at 130°C even with high growth rate (>0.7 nm/s), that is good for industry production. The V_oc increased about 28.3 and 32.2 mV with inserting a passivation layer (6 nm) on planar and texture c-Si wafer, respectively. Furthermore, with the addition of ITO as anti-reflection layer, we obtained that the conversion efficiency of texture HIT solar cell without back surface field (BSF) is 15.1% (active area = 0.783cm²) with V_oc = 563 mV, J_sc = 36.7 mA, and FF = 73.1%.