Characteristics of Si pn junction diode fabricated by sputtering epitaxy

Mesa structure Si pn junction was formed by sputter epitaxy, and its electrical characteristics was investigated. This diode exhibit an ideal factor n of 1.7-1.9 and leakage current J_off at -0.5V of 2-8 × 10^-5 Acm^-2. n deteriorated with increasing sputtering power P, but J_off improved with increasing P. It was explained as that at a large P defects tend to be generated at substrate surface due to high dense energetic particle bombardment at an initial stage of epitaxy, while at a small P, defects within a certain depth were generated during film deposition due to its longer deposition time. It was shown from CV characteristics that an abrupt junction was formed by sputtering epitaxy.