DocumentCode :
1771075
Title :
Investigation of photoluminescence from Ge1−xSnx: A CMOS-compatible material grown on Si via CVD
Author :
Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Conley, Benjamin R. ; Liang Huang ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Naseem, Hameed A. ; Shuiqing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.
Keywords :
chemical vapour deposition; germanium compounds; photoluminescence; semiconductor growth; CMOS-compatible material growth; CVD; Ge1-XSnX; direct band transition; indirect band transition; photoluminescence; Educational institutions; Films; Photoluminescence; Photonic band gap; Silicon; Strain; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989247
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771075
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