• DocumentCode
    1771078
  • Title

    Intense Photoluminescence from Er doped chalcogenide thin films fabricated by cothermal evaporation

  • Author

    Kunlun Yan ; Khu Vu ; Madden, Steve

  • Author_Institution
    Centre for Ultrahigh Bandwidth Devices for Opt. Syst., Australian Nat. Univ., Acton, ACT, Australia
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Erbium doped chalcogenide films were fabricated by cothermal evaporation and demonstrated propagation losses and lifetimes suitable for waveguide amplifiers. The 1490nm pumped Photoluminescence yield is up to ~10x higher than the prior best film material, Er:TeO2.
  • Keywords
    arsenic compounds; chalcogenide glasses; erbium; gallium compounds; germanate glasses; photoluminescence; selenium compounds; semiconductor growth; semiconductor thin films; vacuum deposition; As2S3:Er; Er doped chalcogenide thin films; GeGaSe:Er; cothermal evaporation; intense photoluminescence; lifetimes; propagation losses; waveguide amplifiers; wavelength 1490 nm; Erbium; Films; Glass; Optical waveguides; Photoluminescence; Propagation losses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771078