DocumentCode :
1771078
Title :
Intense Photoluminescence from Er doped chalcogenide thin films fabricated by cothermal evaporation
Author :
Kunlun Yan ; Khu Vu ; Madden, Steve
Author_Institution :
Centre for Ultrahigh Bandwidth Devices for Opt. Syst., Australian Nat. Univ., Acton, ACT, Australia
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Erbium doped chalcogenide films were fabricated by cothermal evaporation and demonstrated propagation losses and lifetimes suitable for waveguide amplifiers. The 1490nm pumped Photoluminescence yield is up to ~10x higher than the prior best film material, Er:TeO2.
Keywords :
arsenic compounds; chalcogenide glasses; erbium; gallium compounds; germanate glasses; photoluminescence; selenium compounds; semiconductor growth; semiconductor thin films; vacuum deposition; As2S3:Er; Er doped chalcogenide thin films; GeGaSe:Er; cothermal evaporation; intense photoluminescence; lifetimes; propagation losses; waveguide amplifiers; wavelength 1490 nm; Erbium; Films; Glass; Optical waveguides; Photoluminescence; Propagation losses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771078
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