Title :
Oxidation of graphene film by non-thermal treatment for new sensing devices
Author :
Mulyana, Yana ; Uenuma, Mutsunori ; Ishikawa, Yozo ; Uraoka, Y.
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
Changes in electrical properties of three identical single layer graphene-based field-effect transistors (G-FETs) after being oxidized through ultraviolet (UV)/ozone (O3) treatment are presented. A decrease in carrier mobility was observed after oxidation. However, carrier mobility recovered after irradiating oxidized G-FETs with UV light, indicating that oxidation with UV/O3 treatment was non-thermally reversible. Raman spectroscopy was conducted to verify that no defects were introduced after oxidation. The existence of chemical bonds between oxygen atom and graphene was confirmed from the X-ray photoelectron spectroscopy (XPS) and directly observed by scanning tunneling microscopy (STM) topography. Moreover, we also clarified that the number of doped oxygen decreased after reduction through UV irradiation by conducting XPS measurement.
Keywords :
Raman spectra; X-ray photoelectron spectra; bonds (chemical); carrier mobility; field effect transistors; graphene; nanosensors; oxidation; scanning tunnelling microscopy; thin film sensors; ultraviolet radiation effects; G-FETs; Raman spectroscopy; UV irradiation; X-ray photoelectron spectroscopy; carrier mobility; chemical bonds; electrical properties; graphene-based field-effect transistors; oxidation; oxygen atom; scanning tunneling microscopy topography; Graphene; Lattices; Logic gates; Oxidation; Radiation effects; Raman scattering; Surfaces;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867199
