Applying amorphous InGaZnO-TFT to RFID tag

Author

Kawamura, Toshihiko ; Ozaki, Hiroaki ; Wakana, Hironori ; Yamazoe, Takanori ; Uchiyama, Hiroyuki ; Hatano, M.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2014

fDate

2-4 July 2014

Firstpage

315

Lastpage

318

Abstract

Trial production of a thin-film radio frequency identification (RFID) tag with a built-in antenna was carried out using an amorphous InGaZnO (a-InGaZnO) thin-film transistor (TFT). A rectifier circuit, RF communication circuit, and logic circuit were formed using an a-InGaZnO TFT. Even after adding an antenna, which is the thickest part, the RFID itself had a thickness of about 1 μm. The RFID operated with a 13.56-MHz-band reader for IC cards and near field communication (NFC) devices. These results indicate the feasibility of an RFID tag that can be adhered to objects with a variety of shapes.

Keywords

HF antennas; amorphous semiconductors; gallium compounds; indium compounds; radiofrequency identification; semiconductor thin films; thin film transistors; zinc compounds; IC cards; InGaZnO; NFC devices; RF communication circuit; RFID tag; amorphous TFT; amorphous thin-film transistor; built-in antenna; frequency 13.56 MHz; logic circuit; near field communication; rectifier circuit; thin-film radio frequency identification tag; Antennas; Electrodes; Logic gates; Radiofrequency identification; Rectifiers; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867207

Filename

6867207