Title :
Applying amorphous InGaZnO-TFT to RFID tag
Author :
Kawamura, Toshihiko ; Ozaki, Hiroaki ; Wakana, Hironori ; Yamazoe, Takanori ; Uchiyama, Hiroyuki ; Hatano, M.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
Trial production of a thin-film radio frequency identification (RFID) tag with a built-in antenna was carried out using an amorphous InGaZnO (a-InGaZnO) thin-film transistor (TFT). A rectifier circuit, RF communication circuit, and logic circuit were formed using an a-InGaZnO TFT. Even after adding an antenna, which is the thickest part, the RFID itself had a thickness of about 1 μm. The RFID operated with a 13.56-MHz-band reader for IC cards and near field communication (NFC) devices. These results indicate the feasibility of an RFID tag that can be adhered to objects with a variety of shapes.
Keywords :
HF antennas; amorphous semiconductors; gallium compounds; indium compounds; radiofrequency identification; semiconductor thin films; thin film transistors; zinc compounds; IC cards; InGaZnO; NFC devices; RF communication circuit; RFID tag; amorphous TFT; amorphous thin-film transistor; built-in antenna; frequency 13.56 MHz; logic circuit; near field communication; rectifier circuit; thin-film radio frequency identification tag; Antennas; Electrodes; Logic gates; Radiofrequency identification; Rectifiers; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867207
