• DocumentCode
    1771477
  • Title

    Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

  • Author

    Wierer, J.J. ; Montano, Ines ; Crawford, M.H. ; Allerman, A.A.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It´s shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium compounds; light emitting diodes; light polarisation; quantum well devices; semiconductor quantum wells; valence bands; wide band gap semiconductors; Al0.44Ga0.56N; anisotropic optical polarization; carrier density; emitting layers; light extraction; light-emitting diodes; quantum wells; quantum-size effects; valence band; wavelength 275 nm; Aluminum gallium nitride; Charge carrier density; III-V semiconductor materials; Optical polarization; Quantum well devices; Semiconductor device measurement; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771477