Title :
Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects
Author :
Wierer, J.J. ; Montano, Ines ; Crawford, M.H. ; Allerman, A.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It´s shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; light emitting diodes; light polarisation; quantum well devices; semiconductor quantum wells; valence bands; wide band gap semiconductors; Al0.44Ga0.56N; anisotropic optical polarization; carrier density; emitting layers; light extraction; light-emitting diodes; quantum wells; quantum-size effects; valence band; wavelength 275 nm; Aluminum gallium nitride; Charge carrier density; III-V semiconductor materials; Optical polarization; Quantum well devices; Semiconductor device measurement; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
