Title :
A new type of “black silicon” materials with high infrared absorption and annealing-insensitivity
Author :
Yan Peng ; Xiangqian Chen ; Yunyan Zhou ; Dan Fang ; Yiming Zhu
Author_Institution :
Shanghai Key Lab. of Modern Opt. Syst., Univ. of Shanghai for Sci. & Technol., Shanghai, China
Abstract :
A new type of “black silicon” materials with high optical absorptance and annealing-insensitivity is designed and fabricated by femtosecond laser pulses. These results have important implications for the fabrication of highly efficient optoelectronic devices.
Keywords :
annealing; elemental semiconductors; infrared spectra; laser materials processing; semiconductor growth; silicon; visible spectra; Si; annealing-insensitivity; black silicon material; femtosecond laser pulses; high infrared absorption; optical absorptance; optoelectronic devices; Absorption; Annealing; Optical device fabrication; Optical pulses; Silicon; Sulfur hexafluoride; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
