Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes

Author

Rishinaramangalam, Ashwin K. ; Fairchild, Michael N. ; Masabih, Saadat M. Ul ; Shima, Darryl M. ; Balakrishnan, Ganesh ; Feezell, Daniel F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA

fYear

2014

fDate

8-13 June 2014

Firstpage

1

Lastpage

2

Abstract

We demonstrate selective-area growth of patterned III-nitride core-shell nanowalls with nonpolar InGaN quantum well shells over large areas. Transmission electron microscopy and photoluminescence are utilized to examine the growth morphology and emission characteristics.

Keywords

III-V semiconductors; indium compounds; light emitting diodes; nanofabrication; nanostructured materials; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; wide band gap semiconductors; III-nitride core-shell nanowalls; InGaN; emission characteristics; growth morphology; laser diodes; light-emitting diodes; nonpolar InGaN quantum well shells; patterned III-nitride core-shell nanowalls; photoluminescence; selective-area growth; transmission electron microscopy; Diode lasers; Gallium nitride; Light emitting diodes; Lithography; Nanoscale devices; Photoluminescence; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2014 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6989514