• DocumentCode
    1771601
  • Title

    Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

  • Author

    Ng, Tien Khee ; Chao Zhao ; Chao Shen ; Jahangir, Shafat ; Janjua, Bilal ; Slimane, Ahmed Ben ; Chun Hong Kang ; Syed, Ahad A. ; Jingqi Li ; Alyamani, Ahmed Y. ; El-Desouki, Munir M. ; Bhattacharya, Pallab ; Ooi, Boon S.

  • Author_Institution
    Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.
  • Keywords
    Epitaxial growth; Gallium nitride; Indium; Light emitting diodes; Nanowires; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Type

    conf

  • Filename
    6989515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771601