• DocumentCode
    1771603
  • Title

    InGaN quantum dots for high efficiency blue and green light emitters

  • Author

    Fischer, Arthur J. ; Xiaoyin Xiao ; Tsao, Jeffrey Y. ; Koleske, Daniel D. ; Ping Lu ; Wright, J.B. ; Sheng Liu ; Wang, George T.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.
  • Keywords
    III-V semiconductors; MOCVD; indium compounds; light emitting diodes; optical fabrication; optical materials; semiconductor quantum dots; InGaN; InGaN materials; InGaN quantum dots; green light emitters; high efficiency blue light emitters; metalorganic chemical vapor deposition; optical studies; post growth processing; structural studies; Gallium nitride; Light emitting diodes; Materials; Quantum dot lasers; Quantum dots; Solid state lighting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771603