DocumentCode :
1771827
Title :
Tensile-strained, heavily n-doped germanium-on-insulator for light emitting devices on silicon
Author :
Xuejun Xu ; Nishida, Keisuke ; Sawano, Kentarou ; Maruizumi, Takuya ; Shiraki, Yasuhiro
Author_Institution :
Res. Center for Silicon Nano-Sci., Tokyo City Univ., Tokyo, Japan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Strong direct gap light emission is obtained from germanium-on-insulator (GOI) with tensile strain of 0.16% and ultra-high n-type doping concentration up to 1.0×1020 cm-3. Microdisk resonators are also fabricated on GOI and show modulated emission spectra.
Keywords :
doping profiles; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; light emitting diodes; micro-optics; microcavities; optical fabrication; optical materials; optical resonators; semiconductor doping; semiconductor-insulator boundaries; silicon; GOI; Ge; Si; direct gap light emission; light emitting devices; microdisk resonators; modulated emission spectra; silicon; tensile-strained heavily n-doped germanium-on-insulator; ultra-high n-type doping concentration; Doping; Lasers; Optical resonators; Silicon; Substrates; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989626
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771827
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