• DocumentCode
    1771993
  • Title

    A silicon integrated BaTiO3 electro-optic modulator

  • Author

    Chi Xiong ; Pernice, Wolfram H. P. ; Ngai, Joseph H. ; Reiner, James W. ; Kumah, Divine ; Walker, Frederick J. ; Ahn, Chong H. ; Tang, Hong X.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A Si-integrated modulator based on epitaxial ferroelectric BaTiO3 thin films is demonstrated with gigahertz modulation bandwidth and an effective Pockels coefficient of 213 ± 49 pm/V.
  • Keywords
    Pockels effect; barium compounds; electro-optical modulation; elemental semiconductors; epitaxial layers; ferroelectric devices; ferroelectric thin films; integrated optoelectronics; silicon; thin film devices; Pockels coefficient; Si-BaTiO3; epitaxial ferroelectric thin films; gigahertz modulation bandwidth; silicon integrated electro-optic modulator; Optical buffering; Optical imaging; Optical modulation; Optical resonators; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771993