DocumentCode :
1771996
Title :
Large photo-induced group delay variations in chalcogenide-on-silicon Mach-Zehnder interferometers
Author :
Califa, R. ; Kaganovskii, Yu. ; Munk, D. ; Genish, H. ; Bakish, Idan ; Rosenbluh, Michael ; Zadok, Avi
Author_Institution :
Fac. of Eng., Bar-Ilan Univ., Ramat-Gan, Israel
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
The rapid post-fabrication trimming of the group index in hybrid chalcogenide-onsilicon Mach-Zehnder interferometers is demonstrated. Index changes of 0.065 are achieved through photo-induced mass transfer in an As10Se90 layer.
Keywords :
Mach-Zehnder interferometers; arsenic compounds; chalcogenide glasses; optical delay lines; optical fabrication; refractive index; silicon; silicon-on-insulator; As10Se90; group index; hybrid chalcogenide-on-silicon Mach-Zehnder interferometers; photo-induced group delay variations; photo-induced mass transfer; rapid post-fabrication trimming; Glass; Indexes; Laser beams; Optical device fabrication; Optical interferometry; Optical materials; Optical waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771996
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