• DocumentCode
    1772195
  • Title

    Mid-infrared GaN/AlxGa1−xN Quantum Cascade detectors grown by MOCVD

  • Author

    Yu Song ; Bhat, Ritesh ; Badami, Pranav ; Tzu-Yung Huang ; Chung-en Zah ; Gmachl, C.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A III-nitride-based Quantum Cascade detector grown by MOCVD is designed, fabricated and tested. Peak responsivity of 100 μA/W with detectivity of up to 108 Jones at ~ 4 μm is measured.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; infrared detectors; optical design techniques; optical fabrication; quantum well devices; semiconductor device testing; wide band gap semiconductors; GaN-AlxGa1-xN; MOCVD; mid-infrared III-nitride-based quantum cascade detector; Detectors; Gallium nitride; MOCVD; Materials; Optical amplifiers; Photoconductivity; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1772195