Title :
High-responsivity 1.7-µm-long InGaAs photodetectors based on photonic crystal with ultrasmall buried heterostructure
Author :
Nozaki, Kengo ; Matsuo, Shoichiro ; Takeda, Kenji ; Sato, Takao ; Fujii, Teruya ; Kuramochi, E. ; Notomi, M.
Author_Institution :
NTT Nanophotonics Center, NTT Corp., Atsugi, Japan
Abstract :
InGaAs-embedded photonic crystal photodetectors were demonstrated towards realizing photoreceivers with small junction capacitance. A 1-A/W responsivity and a 40-Gb/s eye opening were successfully confirmed for the 1.7-μm-long device.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical receivers; photodetectors; photonic crystals; InGaAs; InGaAs photodetectors; bit rate 40 Gbit/s; high responsivity; photonic crystal; photoreceivers; size 1.7 mum; small junction capacitance; ultrasmall buried heterostructure; Capacitance; Indium gallium arsenide; Junctions; Optical device fabrication; Optical waveguides; Photonic crystals; Photonics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
