DocumentCode
1772197
Title
High-responsivity 1.7-µm-long InGaAs photodetectors based on photonic crystal with ultrasmall buried heterostructure
Author
Nozaki, Kengo ; Matsuo, Shoichiro ; Takeda, Kenji ; Sato, Takao ; Fujii, Teruya ; Kuramochi, E. ; Notomi, M.
Author_Institution
NTT Nanophotonics Center, NTT Corp., Atsugi, Japan
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
InGaAs-embedded photonic crystal photodetectors were demonstrated towards realizing photoreceivers with small junction capacitance. A 1-A/W responsivity and a 40-Gb/s eye opening were successfully confirmed for the 1.7-μm-long device.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical receivers; photodetectors; photonic crystals; InGaAs; InGaAs photodetectors; bit rate 40 Gbit/s; high responsivity; photonic crystal; photoreceivers; size 1.7 mum; small junction capacitance; ultrasmall buried heterostructure; Capacitance; Indium gallium arsenide; Junctions; Optical device fabrication; Optical waveguides; Photonic crystals; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989819
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