DocumentCode
1772199
Title
Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band
Author
Desiatov, Boris ; Goykhman, Ilya ; Shappir, Joseph ; Levy, Uriel
Author_Institution
Dept. of Appl. Phys., Hebrew Univ. of Jerusalem, Jerusalem, Israel
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.
Keywords
elemental semiconductors; energy gap; integrated optics; optical waveguides; p-n junctions; photodetectors; silicon; surface states; Si; defect-assisted sub-bandgap avalanche photodetection; interleaved PN junction configuration; interleaved carrier-depletion silicon waveguide; surface states; telecom band; wavelength 1550 nm; Junctions; Optical device fabrication; Optical resonators; Optical surface waves; Optical waveguides; Photodetectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989820
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