Title :
High speed Si modulators with high modulation efficiency and low free carrier absorption by depleting carriers through fringe field junctions
Author :
Kai-Ning Ku ; Lee, Ming-Chang M.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and VπL (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.
Keywords :
elemental semiconductors; integrated optics; optical modulation; silicon; Si; fringe field junctions; high modulation efficiency; high speed Si modulators; low free carrier absorption; modulation depth; modulation speed; Absorption; Modulation; Optical device fabrication; Optical waveguides; Silicon; Waveguide junctions;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
