DocumentCode
1772350
Title
Low-temperature PECVD grown carbon-rich silicon carbide saturable absorber for sub-picosecond passively mode-locked fiber lasers
Author
Chih-Hsien Cheng ; Gong-Ru Lin
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
The low-temperature PECVD grown carbon-rich silicon carbide film with thickness of 200 nm is employed to passively mode-lock the fiber laser with pulsewidth of 510 fs and linewidth of 5.46 nm.
Keywords
fibre lasers; high-speed optical techniques; laser mode locking; optical saturable absorption; plasma CVD; semiconductor thin films; silicon compounds; wide band gap semiconductors; SiXC1-X; low-temperature PECVD grown carbon-rich silicon carbide film; low-temperature PECVD grown carbon-rich silicon carbide saturable absorber; pulsewidth; size 200 nm; subpicosecond passively mode-locked fiber lasers; time 510 fs; Erbium-doped fiber lasers; Laser mode locking; Optical films; Optical pumping; Silicon; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989913
Link To Document