Title :
Low-temperature PECVD grown carbon-rich silicon carbide saturable absorber for sub-picosecond passively mode-locked fiber lasers
Author :
Chih-Hsien Cheng ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The low-temperature PECVD grown carbon-rich silicon carbide film with thickness of 200 nm is employed to passively mode-lock the fiber laser with pulsewidth of 510 fs and linewidth of 5.46 nm.
Keywords :
fibre lasers; high-speed optical techniques; laser mode locking; optical saturable absorption; plasma CVD; semiconductor thin films; silicon compounds; wide band gap semiconductors; SiXC1-X; low-temperature PECVD grown carbon-rich silicon carbide film; low-temperature PECVD grown carbon-rich silicon carbide saturable absorber; pulsewidth; size 200 nm; subpicosecond passively mode-locked fiber lasers; time 510 fs; Erbium-doped fiber lasers; Laser mode locking; Optical films; Optical pumping; Silicon; Silicon carbide;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
