• DocumentCode
    1772481
  • Title

    Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

  • Author

    Takeda, Kenji ; Sato, Takao ; Fujii, Teruya ; Kuramochi, E. ; Notomi, M. ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Matsuo, Shoichiro

  • Author_Institution
    NTT Photonics Labs., Atsugi, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.
  • Keywords
    III-V semiconductors; elemental semiconductors; integrated optics; photonic crystals; plasma materials processing; semiconductor lasers; silicon; wafer bonding; Si; continuous wave operation; current 33 muA; direct wafer bonding; electrically driven photonic-crystal lasers; integrated III-V semiconductor devices; plasma assisted bonding; silicon substrates; temperature 293 K to 298 K; threshold current; Indium phosphide; Photonics; Semiconductor lasers; Silicon; Substrates; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6990113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1772481