Title :
Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding
Author :
Takeda, Kenji ; Sato, Takao ; Fujii, Teruya ; Kuramochi, E. ; Notomi, M. ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Matsuo, Shoichiro
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.
Keywords :
III-V semiconductors; elemental semiconductors; integrated optics; photonic crystals; plasma materials processing; semiconductor lasers; silicon; wafer bonding; Si; continuous wave operation; current 33 muA; direct wafer bonding; electrically driven photonic-crystal lasers; integrated III-V semiconductor devices; plasma assisted bonding; silicon substrates; temperature 293 K to 298 K; threshold current; Indium phosphide; Photonics; Semiconductor lasers; Silicon; Substrates; Threshold current;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
