Automatic and reliable electrical characterization of MOSFETs

Author

Stamenkovic, Z. ; Vasovic, N.D. ; Ristic, G.S.

Author_Institution

Syst. Design, IHP GmbH, Frankfurt (Oder), Germany

fYear

2014

fDate

23-25 April 2014

Firstpage

262

Lastpage

265

Abstract

A low-cost switching system based on PIC 18F4550 microcontroller, which enables the successive measurement of both electrical characteristics (midgap-subthreshold technique, MGT) and charge-pumping currents (charge-pumping technique, CPT) of metal-oxide-semiconductor field-effect transistor (MOSFET) has been developed. The system can be used for switching between MGT and CPT instead of the expensive commercial switching systems. It has been used for characterization (MGT and CPT measurements) of RADFETs with the oxide thicknesses of 0.4 μm and 1 μm.

Keywords

MOSFET; charge pump circuits; microcontrollers; semiconductor device reliability; switching; MOSFET; PIC 18F4550 microcontroller; RADFET; automatic electrical characterization; charge-pumping currents; charge-pumping technique; low-cost switching system; metal-oxide-semiconductor field-effect transistor; midgap-subthreshold technique; oxide thicknesses; reliable electrical characterization; size 0.4 mum to 1 mum; Current measurement; Logic gates; MOSFET; Relays; Semiconductor device measurement; Switches; MOSFET; charge-pumping technique; gate oxide charge; interface trap; microcontroller; midgap-subthreshold technique; switching matrix;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Diagnostics of Electronic Circuits & Systems, 17th International Symposium on

Conference_Location

Warsaw

Print_ISBN

978-1-4799-4560-3

Type

conf

DOI

10.1109/DDECS.2014.6868804

Filename

6868804