Title :
Automatic and reliable electrical characterization of MOSFETs
Author :
Stamenkovic, Z. ; Vasovic, N.D. ; Ristic, G.S.
Author_Institution :
Syst. Design, IHP GmbH, Frankfurt (Oder), Germany
Abstract :
A low-cost switching system based on PIC 18F4550 microcontroller, which enables the successive measurement of both electrical characteristics (midgap-subthreshold technique, MGT) and charge-pumping currents (charge-pumping technique, CPT) of metal-oxide-semiconductor field-effect transistor (MOSFET) has been developed. The system can be used for switching between MGT and CPT instead of the expensive commercial switching systems. It has been used for characterization (MGT and CPT measurements) of RADFETs with the oxide thicknesses of 0.4 μm and 1 μm.
Keywords :
MOSFET; charge pump circuits; microcontrollers; semiconductor device reliability; switching; MOSFET; PIC 18F4550 microcontroller; RADFET; automatic electrical characterization; charge-pumping currents; charge-pumping technique; low-cost switching system; metal-oxide-semiconductor field-effect transistor; midgap-subthreshold technique; oxide thicknesses; reliable electrical characterization; size 0.4 mum to 1 mum; Current measurement; Logic gates; MOSFET; Relays; Semiconductor device measurement; Switches; MOSFET; charge-pumping technique; gate oxide charge; interface trap; microcontroller; midgap-subthreshold technique; switching matrix;
Conference_Titel :
Design and Diagnostics of Electronic Circuits & Systems, 17th International Symposium on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4799-4560-3
DOI :
10.1109/DDECS.2014.6868804
