Observation of reservoir density of state for armchair graphene nanoribbon channel

Graphene nanoribbons (GNRs) are nowadays considered as a promising candidate for the upcoming nanoelectronics. GNRs are fabricated in laboratory by cutting a monolayer graphene into nano strip ribbon. Armchair GNR (A-GNR) which is now widely used because of its semiconducting electronic properties. Band gap energy, velocity of carrier, density of state (DOS) which are the basic features in observing semiconducting properties of materials. Another important feature which is silently discussed in literature is that “reservoir” is a source of charge carrier into A-GNR channel. In this paper we will observe the bandgap energy, velocity of carrier in A-GNR and DOS in A-GNR and reservoir assuming reservoir length in nanometer scale. We will also calculate above mentioned parameter for m=3p+1 and m=3p structures.