Title :
2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications
Author :
Matsuoka, Yasutaka ; Takao, Kazuto ; Wada, Kazuyoshi ; Nakahara, Mizuki ; Kyungmin Sung ; Ohashi, H. ; Nishizawa, Shinichi
Author_Institution :
Power Electron. Dept., Toshiba Mitsubishi-Electr. Ind. Syst. Corp., Fuchu, Japan
Abstract :
A bi-directional isolated DC/DC converter for medium-voltage applications have been discussed for the next-generation electrical grid, such as smart girds. To realize the DC/DC converter for installing on a power distribution system, it should be achieved higher-efficiency and lower-volume. Higher switching frequency enables to reduce the volume of the transformer. However, it is difficult to realize the both higher-efficiency and lower-volume of the DC/DC converter, because it could not operate higher frequency with high power devices such as medium-voltage IGBTs. This paper discusses switching losses and operation limitations for the actual medium-voltage isolated DC/DC converter, in the case of using Si-IGBT. In addition, the experimental system rated at 2.5 kV, 200 kW, and 5kH of the DC/DC converter with a medium-frequency transformer is designed, and the experimental results are shown.
Keywords :
DC-DC power convertors; elemental semiconductors; losses; power semiconductor switches; silicon; smart power grids; switching convertors; IGBT; Si; bidirectional isolated DC-DC converter; medium voltage isolated DC-DC converter; next generation electrical grid; power 200 kW; power distribution system; power semiconductor device; switching frequency; switching losses; voltage 2.5 kV; Copper; Frequency conversion; Insulated gate bipolar transistors; Logic gates; Silicon; Soft switching; Switches; Isolated DC/DC converter; Medium-frequency transformer; Si-IGBT;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869671
