DocumentCode
1774128
Title
A wide speed range high efficiency EV drive system using winding changeover technique and SiC devices
Author
Takatsuka, Yasuhiro ; Hara, Hideki ; Yamada, Koji ; Maemura, Akihiko ; Kume, Tsuyoshi
Author_Institution
Corp. R&D Center, YASKAWA Electr. Corp., Kitakyushu, Japan
fYear
2014
fDate
18-21 May 2014
Firstpage
1898
Lastpage
1903
Abstract
The Silicon Carbide (SiC) based devices will become the mainstream in the motor drive technology in the near future. These next generation power devices give benefits of lower losses, higher voltage, and high temperature operation in the power conversion system, realizing its downsizing and high power density. The winding change over technique, on the other hand, is useful to extend the speed control range with high efficiency of ac motors. This paper describes the effects of using high power SiC MOSFET and SiC SBD, together with the electronic winding changeover technique in the EV motor drives.
Keywords
MOSFET; electric vehicles; elemental semiconductors; motor drives; power convertors; silicon compounds; EV motor drives; SiC; ac motors; electronic winding changeover technique; motor drive technology; next generation power devices; power conversion system; silicon carbide MOSFET; silicon carbide SBD; DC motors; Logic gates; MOSFET; Prototypes; Silicon carbide; Torque; Windings; EV drive system; SiC device; Winding changeover technique;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location
Hiroshima
Type
conf
DOI
10.1109/IPEC.2014.6869844
Filename
6869844
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