• DocumentCode
    1774128
  • Title

    A wide speed range high efficiency EV drive system using winding changeover technique and SiC devices

  • Author

    Takatsuka, Yasuhiro ; Hara, Hideki ; Yamada, Koji ; Maemura, Akihiko ; Kume, Tsuyoshi

  • Author_Institution
    Corp. R&D Center, YASKAWA Electr. Corp., Kitakyushu, Japan
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    1898
  • Lastpage
    1903
  • Abstract
    The Silicon Carbide (SiC) based devices will become the mainstream in the motor drive technology in the near future. These next generation power devices give benefits of lower losses, higher voltage, and high temperature operation in the power conversion system, realizing its downsizing and high power density. The winding change over technique, on the other hand, is useful to extend the speed control range with high efficiency of ac motors. This paper describes the effects of using high power SiC MOSFET and SiC SBD, together with the electronic winding changeover technique in the EV motor drives.
  • Keywords
    MOSFET; electric vehicles; elemental semiconductors; motor drives; power convertors; silicon compounds; EV motor drives; SiC; ac motors; electronic winding changeover technique; motor drive technology; next generation power devices; power conversion system; silicon carbide MOSFET; silicon carbide SBD; DC motors; Logic gates; MOSFET; Prototypes; Silicon carbide; Torque; Windings; EV drive system; SiC device; Winding changeover technique;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
  • Conference_Location
    Hiroshima
  • Type

    conf

  • DOI
    10.1109/IPEC.2014.6869844
  • Filename
    6869844