Title :
Recent technical trends and future prospects of IGBTs and power MOSFETs
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, recent technical trends and future prospects of IGBTs and power MOSFETs is presented. Device technologies mainly for reducing power loss are discussed. This is because the reduction in power loss of these power devices is important for home and consumer appliances. Firstly, historical main road maps of these device technologies are introduced. Next, proposed future road maps and distinguishing results are also introduced. And, a comparison with IGBTs, power MOSFETs and Si-CMOSFETs is discussed. Finally, I will conclude that Si-power devices and SiC-power devices will coexist in home and consumer appliances by taking advantage of each characteristic in the near future.
Keywords :
domestic appliances; elemental semiconductors; insulated gate bipolar transistors; power MOSFET; silicon; silicon compounds; wide band gap semiconductors; IGBT; Si; SiC; consumer appliances; home appliances; power MOSFET; power devices; power loss reduction; Heating; Insulated gate bipolar transistors; MOSFET; Refrigerators; Switches; Switching circuits; IGBT; power MOSFET; power semiconductor device;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869872
